Volume
4, Issue
1, Pages
11-14,
January 2014
Effect of Growth Conditions on Conductivity of Indium Tin Oxide Films
R.K. Sharma1,*, Dr. Vaibhav Jain2, Dr. Arunesh Yadav3 and Ruchi Agarwal4 1,*Research Scholor, Physics Departmant, Sri Venketeshwara University, Meerut, India. 2Assist. Professor, Physics Department, DAV (PG) College, Bulandshahr, India. 3Assist. Professor, Physics Department, ITS Engineering College, Greater Noida, India. 4Assist. Professor, Physics Department, Accurate Engineering College, Greater Noida, India.
Indium tin oxide (ITO) films were grown using radio frequency (RF) sputtering technique. Conductivity or sheet resistance of the ITO films grown by this technique depends on various conditions such as the post annealing temperature, substrate temperature and the composition of the gas used for the deposition. Current work presents the study on the variation of sheet resistance by varying the conditions of growth. All the parameters such as post annealing temperature, substrate temperature and composition of gas used were found to affect the sheet resistance of ITO films.
Keywords: Indium tin oxide (ITO) films, Radio Frequency (RF) sputtering technique.
