Effect of E-M Field on Hall Coefficient of CdS Thin Film
Vaibhav Jain1,*, Ruchi Agrawal2, Dr. A. K. Sharma3, Dr. Pawan Kumar4 and Dr. Abhijit Kulshreshtha5
1,*Research Scholar, Deptt. of Physics, Faculty of Engg. & Tech., Jodhpur National University, Jodhpur, Rajasthan
2Research Scholar, Deptt. of Physics, JJTU, Jhunjunu, Rajasthan, India
3Deptt. of Physics, D.A.V. (P.G.) College, Bulandshahr, India
4Deptt. of Physics, Agarsen Degree College, Sikandarabad, Bulandshahr, India
5Deptt. of Physics, Faculty of Engg. & Tech., Jodhpur National University, Jodhpur, Rajasthan
Thin film of CdS was prepared by vacuum evoparation method. The variation in Hall coefficient RH of prepared thin film was recorded with electromagnetic field of different frequencies (5-15 MHz at 1MHz steps) and of 10mV, and 15mV amplitudes. The statistical analysis of obtained data was done by R-software which showed that the value of Hall coefficient decreases significantly with increment in frequency of E-M field.
