The Study of Channel Thermal noise in MOSFETs

Dr. V.P. Singh

Associate Professor, D.J. College Baraut, U.P., India.

In the present paper we studied experimentally the channel thermal noise in MOSFETs of short and long channel length at various drain to source voltage (V_ds) and various gate to source voltage (V_gs). We also plot graph between channel thermal noise (S_ID) Vs (V_ds) & channel thermal noise (S_ID) Vs gate to source voltage (V_gs). The result so obtained has good agreement with the theoretical data available in the literature. This proves the validity of our MOSFETs model.

Keywords: Channel thermal noise, MOSFETs model.

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