Volume
9, Issue
1, Pages
36-41,
January 2019
Development and characterization of TiO2 based Pd-GATE MOSFET Hydrogen sensor
Pradeep Kumar Yadav1,*, Ruby Yadav2 and Sanjay Kumar Singh3
1,2Physics Department, Meerut College, Meerut, U.P., India.
3Directorate of Higher Education, U.P., Pryagraj, U.P., India.
*email: yadav62pk@gmail.com
The development and characterization of Pd-gate MOSFET hydrogen sensor having TiO2 as gate oxide, has been presented. The response of the fabricated sensor on exposure to hydrogen gas at room temperature has been studied. Also, the temperature dependent response of the device has been studied.
Key words: Pd-Gate, sensor, TiO2.
