2231–4202  (Print)                
2249–9970  (Online)             
Peer Reviewed and Refereed Journal

JPAST is a Peer Reviewed & Refereed biannual multidisciplinary journal starting from July 2011. Articles are invited for Dec 23 issue.
Volume 9, Issue 1, Pages 36-41, January 2019

Development and characterization of TiO2 based Pd-GATE MOSFET Hydrogen sensor

Pradeep Kumar Yadav1,*, Ruby Yadav2 and Sanjay Kumar Singh3

 1,2Physics Department, Meerut College, Meerut, U.P., India.

3Directorate of Higher Education, U.P., Pryagraj, U.P., India.



The development and characterization of Pd-gate MOSFET hydrogen sensor having TiO2 as gate oxide, has been presented. The response of the fabricated sensor on exposure to hydrogen gas at room temperature has been studied. Also, the temperature dependent response of the device has been studied.

Key words:   Pd-Gate, sensor, TiO2.

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